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220502s2021 xx obm 000 0 eng d |
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|a9798522944049
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|a(MiAaPQ)AAI28416673
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|aMiAaPQ|beng|cMiAaPQ|dNTU
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| 100 |
1
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|aJiang, Wan Lin.
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10
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|aComparative Analysis and Demonstration of Monolithic Integration in High-Voltage Gallium Nitride Processes.
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0
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|c2021
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|a1 online resource (129 pages)
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|atext|btxt|2rdacontent
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|acomputer|bc|2rdamedia
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|aonline resource|bcr|2rdacarrier
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|aSource: Masters Abstracts International, Volume: 83-02.
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|aAdvisor: Trescases, Olivier.
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|aThesis (M.A.S.)--University of Toronto (Canada), 2021.
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|aIncludes bibliographical references
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|aGallium Nitride (GaN) power e-HEMT, a popular alternative to Si in high temperature and high voltage power applications, can be monolithically integrated with low-voltage HEMTs, passive components and diodes. Through comparative analysis between the experimental performance of LV circuits, fabricated using ON Semiconductor's 650-V GaN-on-Si and imec's 200-V GaN-on-SOI process, and simulated results from their BCD-counterparts, this thesis identifies the types of circuits that are suitable for monolithic GaN integration based on the processed-power and operating frequency of an application. Using the GaN-on-SOI technology, a binary-weighted segmented gate-driver is fabricated with a power-HEMT, controlling the HEMT's voltage slew-rate and overshoot. The power-HEMT has embedded current and temperature sensing structures. A monolithic high-voltage floating level-shifter and a programmable deadtime generation circuit, as building blocks to a GaN half-bridge IC controlled using a single low-side gating signal, are built and tested.
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|aElectronic reproduction.|bAnn Arbor, Mich. :|cProQuest,|d2022
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|aMode of access: World Wide Web
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4
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|aElectrical engineering.
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4
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|aEngineering.
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| 650 |
4
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|aMechanical engineering.
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| 650 |
4
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|aSimulation.
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| 650 |
4
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|aVelocity.
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| 650 |
4
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|aPlasma.
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| 650 |
4
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|aDVD.
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| 650 |
4
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|aTransplants & implants.
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| 650 |
4
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|aSilicon carbide.
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| 650 |
4
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|aTrends.
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| 650 |
4
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|aSemiconductors.
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| 650 |
4
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|aElectric fields.
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| 650 |
4
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|aPrinted circuit boards.
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| 650 |
4
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|aDesign.
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| 650 |
4
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|aCMOS.
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| 650 |
4
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|aTransistors.
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| 650 |
4
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|aPackaging.
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| 650 |
4
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|aBridges.
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| 653 |
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|aGate-driver
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| 653 |
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|aHigh-electron-mobility transistor
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| 653 |
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|aPower management integrated circuits
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| 653 |
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|aPower converter
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| 653 |
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|aPower electronics
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| 655 |
7
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|aElectronic books.|2local
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| 690 |
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|a0544
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| 690 |
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|a0537
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| 690 |
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|a0548
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| 690 |
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|a0389
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| 690 |
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|a0549
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| 710 |
2
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|aProQuest Information and Learning Co.
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| 710 |
2
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|aUniversity of Toronto (Canada).|bElectrical and Computer Engineering.
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0
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|tMasters Abstracts International|g83-02.
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| 856 |
40
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|uhttp://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28416673|zclick for full text (PQDT)
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